1 http://www.fujielectric.com/products/semiconductor/ 6MBP400VEA060-50 igbt modules igbt module (v series) 600v / 400a / ipm maximum ratings and characteristics absolute maximum ratings (t c =25c, v cc =15v unless otherwise specifed) items symbol min. max. units collector-emitter voltage (*1) v ces 0 600 v short circuit voltage v sc 200 400 v inverter collector current dc i c - 400 a 1ms i cp - 800 a duty=68.6% (*2) -i c - 400 a collector power dissipation 1 device (*3) p c - 1086 w brake collector current dc i c - - a 1ms i cp - - a forward current of diode i f - - a collector power dissipation 1 device (*3) p c - - w supply voltage of pre-driver (*4) v cc -0.5 20 v input signal voltage (*5) v in -0.5 v cc +0.5 v alarm signal voltage (*6) v alm -0.5 v cc v alarm signal current (*7) i alm - 20 ma junction temperature t j - 150 c operating case temperature t opr -20 110 c storage temperature t stg -40 125 c solder temperature (*8) t sol - 260 c isolating voltage (*9) v iso - ac2500 vrms screw torque terminal (m5) - - 3.5 nm mounting (m5) note *1: v ces shall be applied to the input voltage between all collector and emitter. [ p1-(u,v,w,b) , p2-(u,v,w,b) , (u,v,w,b)-n1 , (u,v,w,b)-n2 ] note *2: duty=125c/r th(j-c)d /(i f v f max.)100 note *3: p c =125c/r th(j-c)q (inverter & brake) note *4: v cc shall be applied to the input voltage between terminal no.3 and 1, 7 and 5, 11 and 9, 14 and 13. note *5: v in shall be applied to the input voltage between terminal no.2 and 1, 6 and 5, 10 and 9, 15~18 and 13. note *6: v alm shall be applied to the voltage between terminal no.4 and 1, 8 and 5, 12 and 9, 19 and 13. note *7: i alm shall be applied to the input current to terminal no.4, 8, 12 and 19. note *8: immersion time 101sec. 1 time note *9: terminal to base, 50/60hz sine wave 1min. all terminals should be connected together during the test. features ? temperature protection provided by directly detecting the junction temperature of the igbts ? low power loss and soft switching ? high performance and high reliability igbt with overheating protection ? higher reliability because of a big decrease in number of parts in built-in control circuit
2 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ 3 electrical characteristics (t j =25c, v cc =15v unless otherwise specifed) items symbol conditions min. typ. max. units inverter collector current at off signal input i ces v ce =600v - - 1.0 ma collector-emitter saturation voltage (*10) v ce(sat) i c =400a terminal - - 2.05 v chip - 1.25 - v forward voltage of fwd (*10) v f i f =400a terminal - - 2.60 v chip - 1.80 - v brake collector current at off signal input i ces - - - - ma collector-emitter saturation voltage (*10) v ce(sat) - - - - v - - - v forward voltage of fwd (*10) v f - - - - v - - - v switching time t on v dc =300v, t j =125c, i c =400a 1.1 - - s t off - - 2.1 s t rr v dc =300v, i f =400a - - 0.3 s supply current of p-side pre-driver (per one unit) i ccp switching frequency= 0-15khz t c =-20~110c - - 45 ma supply current of n-side pre-driver i ccn - - 135 ma input signal threshold voltage v inth(on) v in -gnd on 1.2 1.4 1.6 v v inth(off) off 1.5 1.7 1.9 v over current protection level inverter i oc t j =125c 600 - - a brake - - - a over current protection delay time t doc t j =125c - 5 - s short circuit protection delay time t sc t j =125c - 2 3 s igbt chips over heating protection temperature level t joh surface of igbt chips 150 - - c over heating protection hysteresis t jh - 20 - c under voltage protection level v uv 11.0 - 12.5 v under voltage protection hysteresis v h 0.2 0.5 - v alarm signal hold time t alm(oc) alm-gnd t c =-20~110c 1.0 2.0 2.4 ms t alm(uv) v cc 10v 2.5 4.0 4.9 ms t alm(tjoh) 5.0 8.0 11.0 ms resistance for current limit r alm 960 1265 1570 note *10: the max value is a case where it measures from p2-(u,v,w,b) , (u,v,w,b)-n2. thermal characteristics (t c = 25oc) items symbol min. typ. max. units junction to case thermal resistance (*11) inverter igbt r th(j-c)q - - 0.115 c/w fwd r th(j-c)d - - 0.175 c/w brake igbt r th(j-c)q - - - c/w fwd r th(j-c)d - - - c/w case to fin thermal resistance with compound r th(c-f) - 0.05 - c/w note *11: for 1device, the measurement point of the case is just under the chip. noise immunity (v dc =300v, v cc =15v) items conditions min. typ. max. units common mode rectangular noise pulse width 1s, polarity 10 min. judge : no over-current, no miss operating 2.0 - - kv recommended operating conditions items symbol min. typ. max. units dc bus voltage v dc - - 400 v power supply voltage of pre-driver v cc 13.5 15.0 16.5 v switching frequency of ipm f sw - - 20 khz arm shoot through blocking time for ipm's input signal t dead 1.0 - - s screw torque (m5) - 2.5 - 3.5 nm weight items symbol min. typ. max. units weight w t - 980 - g
2 3 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ block diagram pr e -d r i v e r s i n cl u de f ollo w in g f u n c t i o n s 1 . a m pli f i e r f o r dri v e r 2 . sho r t c i r c ui t p r o t ec t i o n 3 . un d e r vol t a g e loc k ou t ci r c u i t 4 . o v e r cu r re n t p r o t ec t io n 5 . i g b t chip over h ea t in g p ro t ec t i o n v c c ? v i n x ? g n d ? v i n y ? v i n z ? a l m ? v c c v g n d v v c c u g n d u v i n u v i n v v c c w ? g n d w v i n w ? a l m u a l m v a l m w ? p r e - d r i v e r p r e - d r i v e r p r e - d r i v e r p r e - d r i v e r p r e - d r i v e r p r e - d r i v e r r a l m r a l m r a l m r a l m u v w p 1 p 2 n 1 n 2 b
4 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ 5 characteristics (representative) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 1 3 1 4 1 5 1 6 1 7 1 8 v inth(on) v inth(off) t c =25~125 c 0 2 4 6 8 10 1 2 1 3 1 4 1 5 1 6 1 7 1 8 t alm(tjoh) t alm(oc) 0 3 6 9 12 15 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 0 0.2 0.4 0.6 0.8 1 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 0 50 100 150 200 0 5 1 0 1 5 2 0 2 5 v cc =17v v cc =15v v cc =13v low-side high-side v cc =17v v cc =15v v cc =13v 0 50 100 150 200 1 2 1 3 1 4 1 5 1 6 1 7 1 8 t joh t jh input signal threshold voltage vs. power supply voltage (typ.) power supply voltage : v cc [ v ] input signal threshold voltage : v inth(on) ,v inth(off) [ v ] alarm hold time vs. power supply voltage (typ.) power supply voltage : v cc [ v ] alarm hold time : t alm [ msec ] under voltage vs. junction temperature (typ.) junction temperature : t j [ c ] under voltage : v uv [ v ] under voltage hysterisis vs. junction temperature (typ.) junction temperature : t j [ c ] under voltage hysterisis : v h [ v ] power supply current vs. switching frequency t j = 25c(typ.) switchig frequency : f sw [ khz ] power supply current : i cc [ ma ] over heating characteristics t joh ,t jh vs. v cc (typ.) power supply voltage : v cc [ v ] over heating protection : t joh [c] oh hysterisis : t jh [c]
4 5 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 80 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 t j = 2 5 c t j = 1 2 5 c 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 t j = 2 5 c t j = 12 5 c 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 v cc = 1 7 v v cc = 15 v v cc = 1 3 v 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 v cc = 1 7 v v cc = 13 v v cc = 1 5 v 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 80 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 v cc = 1 7 v v cc = 1 3 v v cc = 15 v 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 v cc = 1 3 v v cc = 1 5 v v cc = 1 7 v forward current vs. forward voltage [terminal] (typ.) forward voltage : v f [ v ] forward current : i f [ a ] forward current vs. forward voltage [chip] (typ.) forward voltage : v f [ v ] forward current : i f [ a ] collector current vs. collector-emitter voltage t j =125c[terminal] (typ.) collector-emitter voltage : v ce [ v ] collector current : i c [ a ] collector current vs. collector-emitter voltage t j =125c[chip] (typ.) collector-emitter voltage : v ce [ v ] collector current : i c [ a ] collector current vs. collector-emitter voltage t j =25c[terminal] (typ.) collector-emitter voltage : v ce [ v ] collector current : i c [ a ] collector current vs. collector-emitter voltage t j =25c[chip] (typ.) collector-emitter voltage : v ce [ v ] collector current : i c [ a ] inverter
6 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ 7 0 150 300 450 600 750 900 0 5 0 1 0 0 1 5 0 0 300 600 900 1200 1500 0 5 0 1 0 0 1 5 0 0.01 0.1 1 10 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 igbt fwd 0 200 400 600 800 1000 1200 0 2 0 0 4 0 0 6 0 0 8 0 0 rbsoa (repetitive pulse) 0 5 10 15 20 25 30 35 40 45 50 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 e on e off e rr 0 5 10 15 20 25 30 35 40 45 50 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 70 0 8 0 0 e on e off e rr power derating for fwd (max.) [per device] case temperature : t c [ c ] collector power dissipation : p c [ w ] collector power dissipation : p c [ w ] transient thermal resistance (max.) pulse width : p w [ sec ] thermal resistance : r th(j-c) [ c/w ] collector current : i c [ a ] power derating for igbt (max.) [per device] case temperature : t c [ c ] reversed biased safe operating area v cc =15v,t j Q 125 c [main terminal] (min.) collector-emitter voltage : v ce [ v ] switching loss vs. collector current (typ.) v dc =300v,v cc =15v,t j =25 c collector current : i c [ a ] switching loss : e on ,e off ,e rr [mj/cycle] switching loss vs. collector current (typ.) v dc =300v,v cc =15v,t j =125 c collector current : i c [ a ] switching loss : e on ,e off ,e rr [mj/cycle]
6 7 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ 0 200 400 600 800 1000 1200 1400 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 10 100 1000 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 t rr t j =125 c i rr t=125 c i rr t=25 c t rr t=25 c 10 100 1000 10000 0 1 0 0 2 0 0 3 0 0 40 0 5 0 0 6 0 0 7 0 0 8 0 0 t on t off t f 10 100 1000 10000 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 70 0 8 0 0 t on t off t f over current protection vs. junction temperature (typ.) v cc =15v junction temperature : t j [ c ] over current protection level : i oc [ a ] reverse recovery characteristics (typ.) t rr ,i rr vs. i f forward current : i f [ a ] reverse recovery current : i rr [ a ] reverse recovery time : t rr [ nsec ] switching time vs. collector current (typ.) v dc =300v,v cc =15v,t j =25 c collector current : i c [ a ] switching time : t on ,t off ,t f [ nsec ] switching time vs. collector current (typ.) v dc =300v,v cc =15v,t j =125 c collector current : i c [ a ] switching time : t on ,t off ,t f [ nsec ] outline drawings, mm
8 igbt modules 6MBP400VEA060-50 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2012. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2012 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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